13003a transistor datasheet booklet

Vce limits of the transistor that must be observed for reliable operation. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. International in the assembly line c assembled on ww 19, 2001 lot code 1789 logo line c part number date code week 19 year 1 2001 this is a mbr1045 part marking information. Electrical specifications ta 25oc unless otherwise noted. Data sheets contain information regarding a product macom technology solutions is considering for development.

St03, st03k high voltage fastswitching npn power transistor datasheet production data, table 5. High voltage capability,suitable switching speed,wide safety operating area. Absolute maximum ratings symbol parameter value unit vces collectoremitter voltage vbe 0 700 v vceo collectoremitter voltage ib 0 400 v vebo emitterbase voltage ic 0, ib 0. Kse03as datasheet, kse03as pdf, kse03as data sheet, datasheet, data sheet, pdf, fairchild semiconductor, npn silicon transistor. Toshiba transistor silicon npn epitaxial type 2sc2878. Igmopnrq mje03 e03 03 03a transistor a92 to92 por triodo unidspack shenzhen hengjiexin electronics co. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. Main power in my neighborhood not stabile so i need use zenner diode voltage regulator, connect regulated volt to base of power transistor 40411 to make high power volt regulator.

Emitter built in freewheeling diode general description this device is designed for high voltage, high speed. Performance is based on target specifications, simulated results, andor prototype measurements. Npn epitaxial planar silicon transistor 25v 2a highhfe, low frequency generalpurpose amplifier applications. Sbn02d sbn02d sbn02d sbn02d highvoltagefastswitchingnpnpowertransistor features symbol symbol symbol symbol 2.

Mar 22, 2017 that chip includes all the smpsu regulator circuitry a transistor doesnt. Alj03 cj jx discrete semiconductors jotrin electronics. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750. Transistor i will get them from old japan electric machine or receiver from my friends in foreign countries. The utc 03ada is a silicon npn power switching transistor. Collector very high switching speed high voltage capability 1. Contains pinouts for connectors and information about how to build cables etc. T ordering information ordering number package pin assignment packing lead free halogenfree 1 2 3 mje03lxta3t mje03gxta3t to220 b c e tube. St 2sa933 pnp silicon epitaxial planar transistor for switching and af amplifier applications. At high case temperatures, thermal limitations will reduce. Comply with the requirement of rohs compliant directive. Normalized total power dissipation as a function of heatsink temperature vclce v 0 800200 400 600 003aad544 4 2 6 8 ic a 0 vbe. Emitter built in freewheeling diode general description this device is designed for high voltage, high speed switching. Test circuit for reverse bias safe operating area fig 3.

Suitable for lighting, switching regulator and motor control absolute maximum ratings description symbol value vcbo 600 collector base voltage vceo 400 collector emitter sus voltage vebo 9. To92, to126 and to220 are the main packaging type which can satisfy various kinds of needs. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Emt1 umt1n imt1a general purpose transistor dual transistors datasheet loutline parameter tr1 and tr2 emt6 umt6 vceo50v ic150ma emt1 umt1n sc107c sot363 smt6 lfeatures 1two 2sa1037ak chips in a emt, umt or smt package. Various options for the pinouts of the transistors 03 and mje03. Buy them on the market 80% is fake or chinese clone. Package demensions 2000 fairchild semiconductor international rev. Unisonic technologies, 03bs, npn silicon bipolar transistors for.

How to determine the pinout of a damaged transistor 03. Active transistor power dissipation junction temperature above case temperature 105acw 150 mw 16a, 52. Power integrations do a range of 3terminal switchers, but theyre mostly to220 package. Pricing and availability on millions of electronic components from digikey.

Vcbo600v, npn transistor, view the manufacturer, and stock, and datasheet pdf for the alj03 at jotrin electronics. B75 datasheet audio frequency power amplifier toshiba. S je 03 02 and 03 power transistor tr 03 transistor. Pricing and availability on millions of electronic components from digikey electronics. La733p amplifier transistors pnp silicon maximum ratings rating symbol value unit collectoremitter voltage vceo 48 vdc collectorbase voltage vcbo 60 vdc emitterbase voltage vebo 5.

Nchannel enhancement mode mosfet description applications the spn3055 is the nchannel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. There are various industry standard chips in modified 8dil package usually one or more pins are absent so the pin with the flyback pulses on it have more isolation from the. A, february 2000 bd579 dimensions in millimeters 8. This high density process is especially tailored to minimize onstate resistance. The transistor is subdivided into three groups, o, y and s, according to its dc current gain. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. As complementary type the npn transistor st 2sc945 is recommended. The main parameters of the transistor mje03 and 03.